Growth and characterization of diamond films on TiN/Si(100) by microwave plasma chemical vapor deposition
| dc.citation.epage | 127 | en_US |
| dc.citation.issue | 2-3 | en_US |
| dc.citation.spage | 124 | en_US |
| dc.citation.volume | 18 | en_US |
| dc.contributor.author | Chen, Wei-Chun | en_US |
| dc.contributor.author | Wang, Wei-Lin | en_US |
| dc.contributor.author | Tiwari, Rajanish N. | en_US |
| dc.contributor.author | Chang, Li | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:17:44Z | |
| dc.date.available | 2014-12-08T15:17:44Z | |
| dc.date.issued | 2009-02-01 | en_US |
| dc.description.abstract | Polycrystalline diamond films were deposited on silicon (100) substrate by microwave plasma chemical vapor disposition (MPCVD) using similar to 300 nm thick < 001 > textured titanium nitride (TiN) films as buffer layer which were prepared by radio-frequency reactive sputtering. The diamond/TiN films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The results show that no apparent change can be observed for the < 100 > oriented TiN buffer layers after MPCVD even with a negative bias voltage applied onto the substrates. (C) 2008 Published by Elsevier B.V. | en_US |
| dc.identifier.doi | 10.1016/j.diamond.2008.10.018 | en_US |
| dc.identifier.issn | 0925-9635 | en_US |
| dc.identifier.journal | DIAMOND AND RELATED MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.diamond.2008.10.018 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12878 | |
| dc.identifier.wosnumber | WOS:000264429300006 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Diamond film | en_US |
| dc.subject | Nitrides | en_US |
| dc.subject | Chemical vapor deposition | en_US |
| dc.subject | Interface characterization | en_US |
| dc.subject | Morphology | en_US |
| dc.title | Growth and characterization of diamond films on TiN/Si(100) by microwave plasma chemical vapor deposition | en_US |
| dc.type | Article; Proceedings Paper | en_US |