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Magnetoresistance study of patterned permalloy nanostructures

dc.citation.epage1422en_US
dc.citation.issue5en_US
dc.citation.spage1419en_US
dc.citation.volume52en_US
dc.contributor.authorChen, D. C.en_US
dc.contributor.authorMei, J. K.en_US
dc.contributor.authorWang, Y.en_US
dc.contributor.authorYao, Y. D.en_US
dc.contributor.authorWu, J. K.en_US
dc.contributor.authorHuu, C. X.en_US
dc.contributor.authorChau, N.en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:43:39Z
dc.date.available2014-12-08T15:43:39Z
dc.date.issued2008-05-01en_US
dc.description.abstractWe demonstrated the domain wall motion along the direction of the perimeter of a permalloy ring in the onion state. From the magnetoresistance (MR) measurement with a rotating ring at different constant fields, the critical field to form the onion state is near 200 Gauss and the lowest field that can still drag the domain wall is between 20 and 10 Gauss. The results also revealed a tendency for angle shifting and indicated that the lowest field component in the perimeter direction (the tangential component) was near 10 Gauss at an applied field of 20 Gauss.en_US
dc.identifier.issn0374-4884en_US
dc.identifier.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/29521
dc.identifier.wosnumberWOS:000255905500023
dc.language.isoen_USen_US
dc.subjectmagnetoresistanceen_US
dc.subjectdomain wallen_US
dc.subjectpermalloy ringen_US
dc.titleMagnetoresistance study of patterned permalloy nanostructuresen_US
dc.typeArticle; Proceedings Paperen_US

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