Optically pumped GaN-based vertical cavity surface emitting laser at room temperature
| dc.citation.epage | 167 | en_US |
| dc.citation.spage | 166 | en_US |
| dc.contributor.author | Chu, JT | en_US |
| dc.contributor.author | Liang, WD | en_US |
| dc.contributor.author | Kao, CC | en_US |
| dc.contributor.author | Huang, HW | en_US |
| dc.contributor.author | Lu, TC | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:39Z | |
| dc.date.available | 2014-12-08T15:25:39Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | The optically pumped lasing action at 414 nm was obtained from a GaN-based VCSEL with an InGaN multiple quantum wells and two dielectric DBRs fabricated by laser lift-off. The threshold pumping energy is 270 nJ at room temperature conditions. | en_US |
| dc.identifier.isbn | 0-7803-9242-6 | en_US |
| dc.identifier.journal | 2005 Pacific Rim Conference on Lasers and Electro-Optics | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18063 | |
| dc.identifier.wosnumber | WOS:000236757900081 | |
| dc.language.iso | en_US | en_US |
| dc.title | Optically pumped GaN-based vertical cavity surface emitting laser at room temperature | en_US |
| dc.type | Proceedings Paper | en_US |
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