<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

半導體發光元件

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI449224zh_TW
dc.contributor.author王朝勳en_US
dc.contributor.author李鎮宇en_US
dc.contributor.author郭浩中en_US
dc.date.accessioned2014-12-16T06:17:18Z
dc.date.available2014-12-16T06:17:18Z
dc.date.issued2014-08-11en_US
dc.description.abstract本發明揭露一種半導體發光元件,其包含:基板,具有第一表面及一第二表面;第一半導體導電層,設置在基板之第一表面上;插入層,設置在第一半導體導電層上;主動層,設置在插入層上;第二半導體導電層,設置在主動層上;第一電極,設置在第二半導體導電層上;及第二電極,設置在基板之第二表面上,且其第二電極之電性與第一電極之電性相反。由於插入層係為具有層寬能隙的材料層,可以同時作為電子阻擋層與電洞注入層,以此插入層取代電子阻障層,不僅能夠使價電帶的能障降低,讓電洞更容易注入主動層內而與電子復合發光,且能阻檔電子溢流,以增加半導體發光元件的發光效率。zh_TW
dc.identifier.govdocH01L033/62zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/106360
dc.language.isozh_TWen_US
dc.title半導體發光元件zh_TW
dc.typePatentsen_US

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
I449224.pdf
Size:
855.56 KB
Format:
Adobe Portable Document Format

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description: