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磁性薄膜對液晶分子之水平及垂直配向方法

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI356953zh_TW
dc.contributor.author趙如蘋en_US
dc.contributor.author吳信穎en_US
dc.date.accessioned2014-12-16T06:16:43Z
dc.date.available2014-12-16T06:16:43Z
dc.date.issued2012-01-21en_US
dc.description.abstract一種磁性薄膜對液晶分子之水平及垂直配向方法,係利用一直流離子濺鍍裝置(Direct-current Ion Sputter)所生成之透明磁性薄膜,可提供液晶分子幾近垂直排列之狀態。而在經由傳統摩刷處理後之透明磁性薄膜,則可更進一步提供有預傾角之水平或垂直排列之狀態。因此,藉由控制該透明磁性薄膜之成膜條件可改變其磁特性,再由控制其摩刷條件可改變其對液晶之預傾角大小及配向模式,因而可增加其應用範圍。本發明不僅製程手續簡便,並且與傳統之直流或交流電漿源設備共用亦同樣具有高透光度、硬度及絕緣性等特性。除了可降低其成本外,該透明磁性薄膜本身具有之磁性,更無須額外之配向處理程序即可達到非接觸式(Non-contact)多重區域(Multi-domain)配向之效果。zh_TW
dc.identifier.govdocG02F001/1337zh_TW
dc.identifier.govdocC23C014/36zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/106037
dc.language.isozh_TWen_US
dc.title磁性薄膜對液晶分子之水平及垂直配向方法zh_TW
dc.typePatentsen_US

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