Beam Shaping of GaN/InGaN Vertical-Injection Light Emitting Diodes via High-Aspect-Ratio Nanorod Arrays
| dc.citation.epage | 450 | en_US |
| dc.citation.spage | 449 | en_US |
| dc.contributor.author | Tsai, M. A. | en_US |
| dc.contributor.author | Yu, Peichen | en_US |
| dc.contributor.author | Chao, C. L. | en_US |
| dc.contributor.author | Chiu, C. H. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Lu, T. C. | en_US |
| dc.contributor.author | Wang, S. C. | en_US |
| dc.contributor.author | Huang, J. J. | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:06Z | |
| dc.date.available | 2014-12-08T15:25:06Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.abstract | The enhanced light extraction and collimated output beam profile from GaN/InGaN vertical-injection light emitting diodes are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively-coupled-plasma reactive-ion-etching. (C) 2008 Optical Society of America | en_US |
| dc.identifier.isbn | 978-1-4244-5184-5 | en_US |
| dc.identifier.journal | 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17483 | |
| dc.identifier.wosnumber | WOS:000274751300226 | |
| dc.language.iso | en_US | en_US |
| dc.title | Beam Shaping of GaN/InGaN Vertical-Injection Light Emitting Diodes via High-Aspect-Ratio Nanorod Arrays | en_US |
| dc.type | Proceedings Paper | en_US |
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