Estimation of the effect of channel shortening for P-type poly-Si TFTs under AC stress

Abstract

The behavior of the channel shortening effect of the P-type poly-Si TFTs under gate dynamic stress is examined with the I-V and C-V curves. It is discovered the effect is similar to the HEIP effect in P-MOSFETs. The affected channel length estimated from C-V curves is also in accordance with the increased mobility extracted from the I-V curves.