A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles
| dc.citation.epage | 112 | en_US |
| dc.citation.spage | 111 | en_US |
| dc.contributor.author | Chung, SS | en_US |
| dc.contributor.author | Yih, CM | en_US |
| dc.contributor.author | Cheng, SM | en_US |
| dc.contributor.author | Liang, MS | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:25Z | |
| dc.date.available | 2014-12-08T15:27:25Z | |
| dc.date.issued | 1997 | en_US |
| dc.identifier.isbn | 4-930813-75-1 | en_US |
| dc.identifier.journal | 1997 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19676 | |
| dc.identifier.wosnumber | WOS:A1997BJ59D00053 | |
| dc.language.iso | en_US | en_US |
| dc.title | A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles | en_US |
| dc.type | Proceedings Paper | en_US |
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