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Effect of the surface treatments on the turn-on voltage of penfecene-based than-film transistors

dc.citation.epage727en_US
dc.citation.spage724en_US
dc.contributor.authorTsai, Shu-Tingen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:12:15Z
dc.date.available2014-12-08T15:12:15Z
dc.date.issued2007en_US
dc.description.abstractWe employed three organic polymers (PMMA, PVP, and HMDS) to modify the surface of the inorganic dielectric, SiNx. Comparing the device with different treatments, the shift of the turn on voltage has been observed. It is inferred that the shift is due to the trapped charges in the insulator and interlayer between insulator and semiconductor.en_US
dc.identifier.isbn978-957-28522-4-8en_US
dc.identifier.journalIDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9423
dc.identifier.wosnumberWOS:000258177700195
dc.language.isoen_USen_US
dc.titleEffect of the surface treatments on the turn-on voltage of penfecene-based than-film transistorsen_US
dc.typeProceedings Paperen_US

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