Using tunneling junction to enhance hole-injection in organic light-emitting diodes
| dc.citation.epage | 690 | en_US |
| dc.citation.spage | 687 | en_US |
| dc.contributor.author | Chang, Chan-Ching | en_US |
| dc.contributor.author | Hwang, Shiao-Wen | en_US |
| dc.contributor.author | Hsieh, Ming-Ta | en_US |
| dc.contributor.author | Ma, Jia-Wei | en_US |
| dc.contributor.author | Chen, Chin H. | en_US |
| dc.contributor.author | Chen, Jenn-Fang | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:31Z | |
| dc.date.available | 2014-12-08T15:25:31Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | We demonstrate enhanced hole-injection and lower driving voltage in vacuum-deposited organic light-emitting diodes (OLEDs) with a novel tunneling junction composed of the Mg:Alq(3)/WO3 layer. The device, ITO/Mg:Alq(3)/WO3/NPB/Alq(3)/LiFAl achieved one of the lowest driving voltages of 5.8 V at 20mA/cm(2) for conventional small molecule OLEDs. We propose the laminated Mg:Alq(3)/WO3/NPB functions as a Fowler Nordheim tunneling junction, which can improve hole-injection. It was found to also prolong device lifetime under dc driving, that is comparable to the best reported for the Alq(3) emitter. | en_US |
| dc.identifier.journal | IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17930 | |
| dc.identifier.wosnumber | WOS:000258488800176 | |
| dc.language.iso | en_US | en_US |
| dc.title | Using tunneling junction to enhance hole-injection in organic light-emitting diodes | en_US |
| dc.type | Proceedings Paper | en_US |
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