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高速操作及高資料保存特性SONOS型式快閃記憶體之研究

dc.contributor.author莊紹勳en_US
dc.contributor.authorChung Steve Sen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
dc.date.accessioned2014-12-13T10:28:38Z
dc.date.available2014-12-13T10:28:38Z
dc.date.issued2007en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC95-2221-E009-301-MY3zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1637452&docId=279606en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/88463
dc.language.isozh_TWen_US
dc.subject非揮發性記憶體zh_TW
dc.subject快閃記憶體zh_TW
dc.subject奈米晶粒快閃記憶體zh_TW
dc.subject資料保存zh_TW
dc.subject耐久性zh_TW
dc.subjectNonvolatile memoryen_US
dc.subjectFlash memoryen_US
dc.subjectNanocrystal Flash Memoryen_US
dc.subjectData retentionen_US
dc.subjectEndurance.en_US
dc.title高速操作及高資料保存特性SONOS型式快閃記憶體之研究zh_TW
dc.titleA SONOS-Type Flash Memory with High Speed Operation and Good Data Retention Capabilityen_US
dc.typePlanen_US

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