Size-Dependent Trapping Effect in Nano-Dot Non-Volatile Memory
| dc.citation.epage | 121 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.contributor.author | Tsai, C. Y. | en_US |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Chang, T. Y. | en_US |
| dc.contributor.author | Chou, K. Y. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.author | Yeh, F. S. | en_US |
| dc.contributor.department | 電機工程學系 | zh_TW |
| dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:23:05Z | |
| dc.date.available | 2014-12-08T15:23:05Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.abstract | We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As+ implantation to improve the device performance of MONOS CTF device. The TaN-[SiO2-LaAlO3]-[As+-implanted ZrON]-[LaAlO3-SiO2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85 degrees C, and an endurance window of 5.1 V after 10(5) cycles under fast 100 mu s and low +/- 16 V program/erase. The performance of As+-implanted ZrON is significantly better than that of stacked Si3N4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot. | en_US |
| dc.identifier.isbn | 978-1-60768-257-8 | en_US |
| dc.identifier.issn | 1938-5862 | en_US |
| dc.identifier.journal | PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16235 | |
| dc.identifier.wosnumber | WOS:000304670400014 | |
| dc.language.iso | en_US | en_US |
| dc.title | Size-Dependent Trapping Effect in Nano-Dot Non-Volatile Memory | en_US |
| dc.type | Proceedings Paper | en_US |