Characterization and optimization of NO-nitrided gate oxide by RTP
| dc.citation.epage | 690 | en_US |
| dc.citation.spage | 687 | en_US |
| dc.contributor.author | Sun, SC | en_US |
| dc.contributor.author | Chen, CH | en_US |
| dc.contributor.author | Yen, DLW | en_US |
| dc.contributor.author | Lin, CJ | en_US |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:27:43Z | |
| dc.date.available | 2014-12-08T15:27:43Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.isbn | 0-7803-2700-4 | en_US |
| dc.identifier.journal | INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19962 | |
| dc.identifier.wosnumber | WOS:A1995BF10D00155 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characterization and optimization of NO-nitrided gate oxide by RTP | en_US |
| dc.type | Proceedings Paper | en_US |
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