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High Light-Extraction Efficiency GaN-Based Vertical Injection LEDs with Surface Nipple Array

dc.citation.epage1286en_US
dc.citation.spage1285en_US
dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorTsai, M. A.en_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:21:46Z
dc.date.available2014-12-08T15:21:46Z
dc.date.issued2009en_US
dc.description.abstractThe surface nipple arrays were formed by self-assembled polystyrene nano-spheres and inductively coupled plasma etching. The light output power of the vertical-Injection LEDs with nipple array shows 68% enhancement than that of without the nipple array at a driving current of 350 mAen_US
dc.identifier.isbn978-1-4244-3829-7en_US
dc.identifier.journal2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/15509
dc.identifier.wosnumberWOS:000277829300657
dc.language.isoen_USen_US
dc.subjectGaN LEDsen_US
dc.subjectpolystyrene nano-sphereen_US
dc.subjectnipple arrayen_US
dc.titleHigh Light-Extraction Efficiency GaN-Based Vertical Injection LEDs with Surface Nipple Arrayen_US
dc.typeArticleen_US

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