Diamond nucleation on Cu by using MPCVD with a biasing pretreatment
| dc.citation.epage | 180 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 176 | en_US |
| dc.citation.volume | 72 | en_US |
| dc.contributor.author | Chuang, KL | en_US |
| dc.contributor.author | Chang, L | en_US |
| dc.contributor.author | Lu, CA | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:43:18Z | |
| dc.date.available | 2014-12-08T15:43:18Z | |
| dc.date.issued | 2001-11-01 | en_US |
| dc.description.abstract | Bias enhanced nucleation of diamond on polycrystalline Cu substrates has been investigated. With CH4 concentration increased, the nucleation density is increased and saturated at 10% CH4, but the quality of diamond is decreased. Bias voltages also play an important role on the nucleation of diamond. It is found that the nucleation density is highest when the voltage was set at -250 V. (C) 2001 Elsevier Science B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0254-0584(01)00431-X | en_US |
| dc.identifier.issn | 0254-0584 | en_US |
| dc.identifier.journal | MATERIALS CHEMISTRY AND PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0254-0584(01)00431-X | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29315 | |
| dc.identifier.wosnumber | WOS:000171822100016 | |
| dc.language.iso | en_US | en_US |
| dc.subject | nucleation | en_US |
| dc.subject | plasma | en_US |
| dc.subject | chemical vapor deposition | en_US |
| dc.title | Diamond nucleation on Cu by using MPCVD with a biasing pretreatment | en_US |
| dc.type | Article; Proceedings Paper | en_US |