Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate
| dc.citation.epage | 509 | en_US |
| dc.citation.spage | 508 | en_US |
| dc.contributor.author | Lee, YJ | en_US |
| dc.contributor.author | Hsu, TC | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.author | Yang, YL | en_US |
| dc.contributor.author | Yen, SN | en_US |
| dc.contributor.author | Chu, YT | en_US |
| dc.contributor.author | Shen, YJ | en_US |
| dc.contributor.author | Hsieh, MH | en_US |
| dc.contributor.author | Jou, MJ | en_US |
| dc.contributor.author | Lee, BJ | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:39Z | |
| dc.date.available | 2014-12-08T15:25:39Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20% higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report. | en_US |
| dc.identifier.isbn | 0-7803-9242-6 | en_US |
| dc.identifier.journal | 2005 Pacific Rim Conference on Lasers and Electro-Optics | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18072 | |
| dc.identifier.wosnumber | WOS:000236757900243 | |
| dc.language.iso | en_US | en_US |
| dc.subject | patterned sapphire substrate (PSS) | en_US |
| dc.subject | near ultraviolet | en_US |
| dc.subject | LEDs | en_US |
| dc.title | Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate | en_US |
| dc.type | Proceedings Paper | en_US |
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