高介電材料結合SONOS 之新穎非揮發性記憶體元件製作與物理特性研究(II)
| dc.contributor.author | 施敏 | en_US |
| dc.contributor.author | SZE SIMON MIN | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:49:40Z | |
| dc.date.available | 2014-12-13T10:49:40Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC98-2221-E009-002 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1903569&docId=315422 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/101724 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 高介電材料結合SONOS 之新穎非揮發性記憶體元件製作與物理特性研究(II) | zh_TW |
| dc.title | High-K Materials Combined with SONOS Nonvolatile Memory Device Fabrication and Physical Characteristics Research(II) | en_US |
| dc.type | Plan | en_US |