A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology
| dc.citation.epage | 1508 | en_US |
| dc.citation.spage | 1505 | en_US |
| dc.contributor.author | Wu, Tzung-Han | en_US |
| dc.contributor.author | Meng, Chinchun | en_US |
| dc.contributor.author | Huang, Guo-Wei | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:24:55Z | |
| dc.date.available | 2014-12-08T15:24:55Z | |
| dc.date.issued | 2006 | en_US |
| dc.description.abstract | A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (Heterojunction Bipolar Transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP(1dB') is -18 dBm, IIP(2) is 13 dBm and the IIP(3) is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz. | en_US |
| dc.identifier.doi | 10.1109/MWSYM.2006.249578 | en_US |
| dc.identifier.isbn | 978-0-7803-9541-1 | en_US |
| dc.identifier.issn | 0149-645X | en_US |
| dc.identifier.journal | 2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/MWSYM.2006.249578 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17296 | |
| dc.identifier.wosnumber | WOS:000244379003060 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaInP/GaAs HBT | en_US |
| dc.subject | sub-harmonic mixer | en_US |
| dc.subject | Gilbert mixer | en_US |
| dc.subject | self-mixing | en_US |
| dc.subject | 2LO-to-RF isolation | en_US |
| dc.title | A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology | en_US |
| dc.type | Proceedings Paper | en_US |