Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications
| dc.citation.epage | 178 | en_US |
| dc.citation.spage | 170 | en_US |
| dc.citation.volume | 3277 | en_US |
| dc.contributor.author | Pan, CL | en_US |
| dc.contributor.author | Lin, GR | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:15Z | |
| dc.date.available | 2014-12-08T15:27:15Z | |
| dc.date.issued | 1998 | en_US |
| dc.description.abstract | Arsenic-ion-implanted GaAs (or GaAs:As+), with excess-arsenic-related deep level defects, has recently emerged as a potential alternative to low-temperature molecular-beam-epitaxy (LTMBE) grown GaAs for ultrafast optoelectronic applications. In this paper, we review results of our structural, ultrafast optical and optoelectronic investigations of as-implanted and thermally annealed GaAs:As+. Picosecond photoconductive switching responses are reported for devices fabricated on thermally-annealed low-dose and high-dose implanted GaAs:As+. Novel sign reversals in near-bandgap ultrafast optical responses were observed and explained. | en_US |
| dc.identifier.doi | 10.1117/12.306153 | en_US |
| dc.identifier.isbn | 0-8194-2716-0 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | ULTRAFAST PHENOMENA IN SEMICONDUCTORS II | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.306153 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19484 | |
| dc.identifier.wosnumber | WOS:000074381700020 | |
| dc.language.iso | en_US | en_US |
| dc.subject | arsenic-ion-implanted GaAs | en_US |
| dc.subject | GaAs : As+ | en_US |
| dc.subject | ultrafast | en_US |
| dc.subject | photoconductive switch | en_US |
| dc.title | Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications | en_US |
| dc.type | Proceedings Paper | en_US |