Flexible MIM Capacitors Using Zirconium-Silicate and Hafnium-Silicate as Gate-Dielectric Films

Abstract

To the first time, we have fabricated metal-insulator-metal (MIM) capacitors using 10-nm-thick zirconium-silicate (ZrSi(x)O(y)) and hafnium-silicate (HfSi(m)O(n)) thin dielectric films on the flexible polyimide substrate by sol-gel process. The sol-gel films were oxidized by employing oxygen plasma to enhance the electrical performance at low temperature (similar to 250 degrees C). The oxygen plasma may accept as most effective process at low temperature to surface oxidation of a dielectric film for flexible organic device. The results showed the satisfactory electrical characteristics for the corresponding films with low leakage current densities similar to 10(-9) Acm(-2) at 5V and maximum- capacitance densities 12.10 (ZrSi(x)O(y)) and 14.32 fF/mu m(2) (HfSi(m)O(n)), at 1MHz. These entire make the combinatorial thin oxide films based MIM capacitors to he very suitable for future flexible devices.