Semiconductor Device
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20120313107 | zh_TW |
| dc.contributor.author | CHANG Yi | en_US |
| dc.contributor.author | CHANG Chia-Hua | en_US |
| dc.contributor.author | LIN Yueh-Chin | en_US |
| dc.contributor.author | CHEN Yu-Kong | en_US |
| dc.contributor.author | SHIE Ting-En | en_US |
| dc.date.accessioned | 2014-12-16T06:15:03Z | |
| dc.date.available | 2014-12-16T06:15:03Z | |
| dc.date.issued | 2012-12-13 | en_US |
| dc.description.abstract | A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof. | zh_TW |
| dc.identifier.govdoc | H01L029/20 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105103 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Semiconductor Device | zh_TW |
| dc.type | Patents | en_US |