Numerical Simulation of Physical and Electrical Characteristics of Ge/Si Quantum Dots Based Intermediate Band Solar Cell

dc.citation.epage	364	en_US
dc.citation.spage	361	en_US
dc.citation.woscount	0	en_US
dc.contributor.author	Lee, Ming-Yi	en_US
dc.contributor.author	Tsai, Yi-Chia	en_US
dc.contributor.author	Li, Yiming	en_US
dc.contributor.author	Samukawa, Seiji	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.date.accessioned	2017-04-21T06:48:50Z
dc.date.available	2017-04-21T06:48:50Z
dc.date.issued	2016	en_US
dc.description.abstract	According to the Bloch theorem and the symmetry of superlattice configuration, a new 3D finite element method is employed to calculate the miniband structure and density of state for well-aligned Ge/Si QDs array. This method can overcome the approximation of multi-dimensional Kronig-Penny model and constrain on QDs superlattice structure. The interaction of electronic structure among Ge/Si QDs with various density of QDs therough QDs dimension and superlattice structure is investigated to provide a design guideline for QDs solar cell.	en_US
dc.identifier.isbn	978-1-5090-1493-4	en_US
dc.identifier.journal	2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/134639
dc.identifier.wosnumber	WOS:000391840000104	en_US
dc.language.iso	en_US	en_US
dc.title	Numerical Simulation of Physical and Electrical Characteristics of Ge/Si Quantum Dots Based Intermediate Band Solar Cell	en_US
dc.type	Proceedings Paper	en_US

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