[DOUBLE-TRIGGERED SILICON CONTROLLING RECTIFIER AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT THEREOF]
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20050133869 | zh_TW |
| dc.contributor.author | Ker, Ming-Dou | en_US |
| dc.contributor.author | Hsu, Kuo-Chun | en_US |
| dc.date.accessioned | 2014-12-16T06:16:17Z | |
| dc.date.available | 2014-12-16T06:16:17Z | |
| dc.date.issued | 2005-06-23 | en_US |
| dc.description.abstract | A double-triggered silicon controller rectifier (SCR) comprises a plurality of N+ diffusion areas, a plurality of P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal. | zh_TW |
| dc.identifier.govdoc | H01L021/332 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105743 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | [DOUBLE-TRIGGERED SILICON CONTROLLING RECTIFIER AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT THEREOF] | zh_TW |
| dc.type | Patents | en_US |