A concurrent 0.18-mu m CMOS self-biased dual-band driver amplifier for IEEE 802.11 a/b/g

dc.citation.epage	1267	en_US
dc.citation.spage	1264	en_US
dc.contributor.author	Jou, CF	en_US
dc.contributor.author	Cheng, KH	en_US
dc.contributor.author	Chen, JL	en_US
dc.contributor.department	傳播研究所	zh_TW
dc.contributor.department	Institute of Communication Studies	en_US
dc.date.accessioned	2014-12-08T15:25:55Z
dc.date.available	2014-12-08T15:25:55Z
dc.date.issued	2004	en_US
dc.description.abstract	A 2.4 GHz / 5.2 GHz self-biased dual band CMOS driver amplifier with a 9.8-dBm output power using TSMC 0.18-mu m IP6M standard CMOS process is described. The CMOS amplifier designed on Rogers R04003 printed-circuit-board (PCB) with a single input and a single output signal chain is simultaneously optimized for wireless local area network (WLAN) 2.4 GHz / 5.2 GHz applications. Simulation results show that the driver amplifier exhibits an Output power about 9.7-dBm in both 2.4 GHz and 5.2 GHz, output interception point (OIP3) of 24dBm with power added efficiency (PAE) = 27% and PAE =24% in 2.4GHz and 5.2 GHz, respectively. The die size is 0.85x0.7 mm(2).	en_US
dc.identifier.isbn	0-7803-8511-X	en_US
dc.identifier.journal	2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/18362
dc.identifier.wosnumber	WOS:000227342201112
dc.language.iso	en_US	en_US
dc.title	A concurrent 0.18-mu m CMOS self-biased dual-band driver amplifier for IEEE 802.11 a/b/g	en_US
dc.type	Proceedings Paper	en_US

Files

Now showing 1 - 1 of 1