Enhanced vertical extraction efficiency from a thin-film InGaN/GaN photonic crystal light-emitting diodes
| dc.citation.epage | 2280 | en_US |
| dc.citation.spage | 2279 | en_US |
| dc.contributor.author | Lai, Chun-Feng | en_US |
| dc.contributor.author | Huang, H. W. | en_US |
| dc.contributor.author | Lin, C. H. | en_US |
| dc.contributor.author | Kno, H. C. | en_US |
| dc.contributor.author | Lu, T. C. | en_US |
| dc.contributor.author | Wang, S. C. | en_US |
| dc.contributor.author | Chao, Chia-Hsin | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:30Z | |
| dc.date.available | 2014-12-08T15:03:30Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | An InGaN/GaN thin-film light-emitting diode with the photonic crystal (PhC) on the surface and a TiO(2)/SiO(2) omnidirectional reflector on the bottom was fabricated and found the line-width emission spectrum of 5 nm by the PhC. (C) 2007 Optical Society of America | en_US |
| dc.identifier.isbn | 978-1-55752-859-9 | en_US |
| dc.identifier.journal | 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2019 | |
| dc.identifier.wosnumber | WOS:000260498401130 | |
| dc.language.iso | en_US | en_US |
| dc.title | Enhanced vertical extraction efficiency from a thin-film InGaN/GaN photonic crystal light-emitting diodes | en_US |
| dc.type | Proceedings Paper | en_US |
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