Strain-induced channel backscattering modulation in nanoscale CMOSFETs

dc.citation.epage	+	en_US
dc.citation.spage	62	en_US
dc.citation.woscount	0	en_US
dc.contributor.author	Chen, Hung-Wei	en_US
dc.contributor.author	Lin, Hong-Nien	en_US
dc.contributor.author	Ko, Chih-Hsin	en_US
dc.contributor.author	Ge, Chung-Hu	en_US
dc.contributor.author	Lin, Horng-Chih	en_US
dc.contributor.author	Huang, Tiao-Yuan	en_US
dc.contributor.author	Lee, Wen-Chin	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.date.accessioned	2017-04-21T06:48:25Z
dc.date.available	2017-04-21T06:48:25Z
dc.date.issued	2006	en_US
dc.description.abstract	The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballistic efficiency with fair accuracy. The mechanism of drain current dependence on strain-induced mobility change was also investigated based on channel backscattering theory.	en_US
dc.identifier.isbn	1-4244-0181-X	en_US
dc.identifier.journal	2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/135220
dc.identifier.wosnumber	WOS:000239791300020	en_US
dc.language.iso	en_US	en_US
dc.title	Strain-induced channel backscattering modulation in nanoscale CMOSFETs	en_US
dc.type	Proceedings Paper	en_US

Files

Now showing 1 - 1 of 1