The impact of microstructure end defects on moisture resistance of novel SiO(x)N(y) passivation layer for OLED applications
| dc.citation.epage | 283 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 280 | en_US |
| dc.citation.volume | en_US | |
| dc.contributor.author | Chen, Yi-Jen | en_US |
| dc.contributor.author | Hsu, Kuo-Yuan | en_US |
| dc.contributor.author | Chen, Yin-Ying | en_US |
| dc.contributor.author | Su, Cheng-Feng | en_US |
| dc.contributor.author | Tang, Shuenn-Jiun | en_US |
| dc.contributor.author | Leu, Jihperng | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:07:49Z | |
| dc.date.available | 2014-12-08T15:07:49Z | |
| dc.date.issued | 2007-01-01 | en_US |
| dc.description.abstract | The effects of grain boundaries in passivation layer and AI hillocks on moisture resistance were studied for SiO(x)N(y) thin films deposited by modified Ar ion beam evaporation. AI hillocks are attributed to be the culprit for moisture permeation, while its density and height dictate the required number layers of passivation for OLED applications. | en_US |
| dc.identifier.doi | 10.1002/9780470692325.ch27 | en_US |
| dc.identifier.isbn | 978-957-28522-4-8 | en_US |
| dc.identifier.issn | en_US | |
| dc.identifier.journal | IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/9780470692325.ch27 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6146 | |
| dc.language.iso | en_US | en_US |
| dc.title | The impact of microstructure end defects on moisture resistance of novel SiO(x)N(y) passivation layer for OLED applications | en_US |
| dc.type | Article | en_US |
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