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大尺度二維層狀材料二硫化鉬之成長製備、自旋及能谷物理與積體電路開發-大尺度二維層狀材料二硫化鉬之成長與電子結構之研究

dc.contributor.author張文豪zh_TW
dc.contributor.authorCHANG WEN HAOen_US
dc.contributor.department國立交通大學電子物理學系(所)zh_TW
dc.date.accessioned2016-03-28T08:17:42Z
dc.date.available2016-03-28T08:17:42Z
dc.date.issued2015en_US
dc.description.sponsorship科技部zh_TW
dc.identifier.govdocNSC102-2119-M009-002-MY3zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=11263768&docId=453230en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/130342
dc.language.isozh_TWen_US
dc.title大尺度二維層狀材料二硫化鉬之成長製備、自旋及能谷物理與積體電路開發-大尺度二維層狀材料二硫化鉬之成長與電子結構之研究zh_TW
dc.titleLarge-Area Synthesis and Electronic Structures of Mos2 Layersen_US
dc.typePlanen_US

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