METHOD FOR MANUFACTURING WIDE-BANDGAP OXIDE EPITAXIAL FILM
| dc.citation.patentcountry | USA | en_US |
| dc.citation.patentnumber | 20190081197 | en_US |
| dc.contributor.author | RAY-HUA HORNG | en_US |
| dc.contributor.author | YEN-CHU LI | en_US |
| dc.contributor.author | CHUN-YI TUNG | en_US |
| dc.contributor.author | SI-HAN TSAI | en_US |
| dc.contributor.author | LI-CHUNG CHENG | en_US |
| dc.date.accessioned | 2019-04-11T06:20:39Z | |
| dc.date.available | 2019-04-11T06:20:39Z | |
| dc.date.issued | 2019-03-14 | en_US |
| dc.description.abstract | The present invention provides a method for manufacturing a wide-bandgap oxide epitaxial film. An epitaxial film with superior physical properties, such as high saturated drift velocity of electrons, small dielectric constant, high thermal stability, and excellent high-temperature resistance, is formed on a substrate. In addition, because the oxide epitaxial film is grown by metal-organic chemical vapor deposition (MOCVD), the yield is improved significantly and defects in the epitaxy is reduced. | en_US |
| dc.identifier.govdoc | H01L031/18 | en_US |
| dc.identifier.govdoc | H01L031/032 | en_US |
| dc.identifier.govdoc | C30B029/26 | en_US |
| dc.identifier.govdoc | C30B025/18 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/151509 | |
| dc.language.iso | en_US | en_US |
| dc.title | METHOD FOR MANUFACTURING WIDE-BANDGAP OXIDE EPITAXIAL FILM | en_US |
| dc.type | Patents | en_US |