Large Area MoS2 van der Waals Epitaxy on III-Ns and the Epitaxial Formation of a n-MoS2/p-InGaN Diode
| dc.citation.epage | 658 | en_US |
| dc.citation.spage | 657 | en_US |
| dc.contributor.author | Jung, Kyooho | en_US |
| dc.contributor.author | Liu, Che-Yu | en_US |
| dc.contributor.author | Kim, J. D. | en_US |
| dc.contributor.author | Choi, Wonsik | en_US |
| dc.contributor.author | Zhou, Weidong | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Li, Xiuling | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2018-08-21T05:56:51Z | |
| dc.date.available | 2018-08-21T05:56:51Z | |
| dc.date.issued | 2016-01-01 | en_US |
| dc.description.abstract | Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy. Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy. | en_US |
| dc.identifier.issn | 2374-0140 | en_US |
| dc.identifier.journal | 2016 IEEE PHOTONICS CONFERENCE (IPC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/146742 | |
| dc.identifier.wosnumber | WOS:000406880100301 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Large Area MoS2 van der Waals Epitaxy on III-Ns and the Epitaxial Formation of a n-MoS2/p-InGaN Diode | en_US |
| dc.type | Proceedings Paper | en_US |
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