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Carrier Dynamics in InN Nanorod Arrays

dc.contributor.authorSu, S. -H.en_US
dc.contributor.authorYu, C. -C.en_US
dc.contributor.authorGwo, S.en_US
dc.contributor.authorAhn, H.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:35:43Z
dc.date.available2014-12-08T15:35:43Z
dc.date.issued2013en_US
dc.description.abstractA fast initial decay was observed from InN nanorods with similar to 30 nm diameter, the lifetime of which is much shorter than the carrier cooling time, demonstrating the substantial surface-associated influence on carrier relaxation in nanorods.en_US
dc.identifier.isbn978-1-4673-6476-8en_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/24111
dc.identifier.wosnumberWOS:000334176100603
dc.language.isoen_USen_US
dc.titleCarrier Dynamics in InN Nanorod Arraysen_US
dc.typeProceedings Paperen_US

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