Mobility and oxide breakdown behavior in ultra-this oxide with atomically smooth interface
| dc.citation.epage | 286 | en_US |
| dc.citation.spage | 283 | en_US |
| dc.contributor.author | Cheng, YC | en_US |
| dc.contributor.author | Chen, WJ | en_US |
| dc.contributor.author | Lin, BC | en_US |
| dc.contributor.author | Tsai, C | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:15Z | |
| dc.date.available | 2014-12-08T15:27:15Z | |
| dc.date.issued | 1998 | en_US |
| dc.description.abstract | The device performance made by thin gate oxide is related to the oxide thickness uniformity and the interface smoothness. Unfortunately, native oxide roughens the initial surface before thermal oxidation. in this paper, we have designed a leak-tight low-pressure N2O oxidation system, and the native oxide is desorbed in-situ under H-2 environment, Atomically smooth oxide and Si interface of ultra-thill oxides (11-38 Angstrom) were achieved as observed by high-resolutional TEM. Significant mobility enhancement over large gate field is obtained by reducing interface roughness scattering. The oxide reliability is also improved by this smoother interface between Si and oxide. | en_US |
| dc.identifier.doi | 10.1109/ICSICT.1998.785875 | en_US |
| dc.identifier.isbn | 0-7803-4306-9 | en_US |
| dc.identifier.journal | 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/ICSICT.1998.785875 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19489 | |
| dc.identifier.wosnumber | WOS:000080928800077 | |
| dc.language.iso | en_US | en_US |
| dc.title | Mobility and oxide breakdown behavior in ultra-this oxide with atomically smooth interface | en_US |
| dc.type | Proceedings Paper | en_US |