Gas sensing mechanism in pentacene-based OTFTs

dc.citation.epage	546	en_US
dc.citation.spage	544	en_US
dc.contributor.author	Zan, Hsiao-Wen	en_US
dc.contributor.author	Liang, Yun-Chia	en_US
dc.contributor.author	Tsai, Wuu-Wei	en_US
dc.contributor.author	Yang, Yuh-Shyong	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2014-12-08T15:12:07Z
dc.date.available	2014-12-08T15:12:07Z
dc.date.issued	2007	en_US
dc.description.abstract	The ammonia gas sensing behaviors of pentacene-based organic thin-film transistors were characterized by analyzing parameters such as the threshold voltage, the field-effect mobility and the subthreshold swing. It was firstly found that the bias-induced carriers strongly enhanced the gas sensing. Bias-stress model successfully explained the experimental results. The ammonia-induced threshold voltage shift was probable due to the generation of nitrogen- or hydrogen-related defect states in the pentacene film.	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/9290
dc.identifier.wosnumber	WOS:000258177700141
dc.language.iso	en_US	en_US
dc.title	Gas sensing mechanism in pentacene-based OTFTs	en_US
dc.type	Proceedings Paper	en_US

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