Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference

dc.citation.epage	652	en_US
dc.citation.spage	649	en_US
dc.contributor.author	Yu, DS	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Wu, CH	en_US
dc.contributor.author	Li, MF	en_US
dc.contributor.author	Zhu, C	en_US
dc.contributor.author	Wang, SJ	en_US
dc.contributor.author	Yoo, WJ	en_US
dc.contributor.author	Hung, BF	en_US
dc.contributor.author	McAlister, SP	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:25:11Z
dc.date.available	2014-12-08T15:25:11Z
dc.date.issued	2005	en_US
dc.description.abstract	Metallic diffusion through high-K HfO(2), caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phi(m,eff)) of 4.25 and 5.15 eV are obtained in TaTb(0.2)N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual phi(m,eff) of 4.15 and 4.9 eV are also obtained in Yb(x)Si/HfAlON and Ir(x)Si/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.	en_US
dc.identifier.isbn	0-7803-9268-X	en_US
dc.identifier.journal	IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/17581
dc.identifier.wosnumber	WOS:000236225100147
dc.language.iso	en_US	en_US
dc.title	Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference	en_US
dc.type	Proceedings Paper	en_US

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