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Growth and Electroluminescent Property of Multi-Facet InGaN/GaN Multiple Quantum Well Light Emitting Device

dc.citation.woscount0en_US
dc.contributor.authorLi, Yun-Jingen_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2017-04-21T06:49:13Z
dc.date.available2017-04-21T06:49:13Z
dc.date.issued2015en_US
dc.description.abstractWe report the study of InGaN/GaN multiple quantum wells (MQWs) grown on multi-facet microrods. The multi-facet MQWs have broad emission spectrum. Electrical injection was demonstrated with emission color ranged from red to blue.en_US
dc.identifier.isbn978-1-55752-968-8en_US
dc.identifier.issn2160-9020en_US
dc.identifier.journal2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134623
dc.identifier.wosnumberWOS:000370627101066en_US
dc.language.isoen_USen_US
dc.titleGrowth and Electroluminescent Property of Multi-Facet InGaN/GaN Multiple Quantum Well Light Emitting Deviceen_US
dc.typeProceedings Paperen_US

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