Flexible InGaZnO TFTs with Stacked GeO2/TiO2 Gate Dielectrics
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Hsu, Hsiao-Hsuan | en_US |
| dc.contributor.author | Chang, Chun-Yen | en_US |
| dc.contributor.author | Cheng, Chun-Hu | en_US |
| dc.contributor.author | Yu, Shu-Hung | en_US |
| dc.contributor.author | Su, Ching-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:50:00Z | |
| dc.date.available | 2017-04-21T06:50:00Z | |
| dc.date.issued | 2013 | en_US |
| dc.description.abstract | We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm(2)/Vs, and a good I-on/I-off ratio of 3.7x10(5). The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-kappa TiO2. | en_US |
| dc.identifier.isbn | 978-1-4673-2523-3 | en_US |
| dc.identifier.journal | 2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/136159 | |
| dc.identifier.wosnumber | WOS:000380585600187 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | thin film transistor (TFT) | en_US |
| dc.subject | flexible | en_US |
| dc.subject | GeO2 | en_US |
| dc.subject | TiO2 | en_US |
| dc.title | Flexible InGaZnO TFTs with Stacked GeO2/TiO2 Gate Dielectrics | en_US |
| dc.type | Proceedings Paper | en_US |
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