Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O
| dc.citation.epage | 203 | en_US |
| dc.citation.spage | 202 | en_US |
| dc.contributor.author | Lai, FI | en_US |
| dc.contributor.author | Chen, WY | en_US |
| dc.contributor.author | Kao, CC | en_US |
| dc.contributor.author | Lin, CF | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:39Z | |
| dc.date.available | 2014-12-08T15:25:39Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | An enhancement of GaN-based LEDs light output using photoelectrochemical (PEC) oxidation method via H2O on the p-GaN surface was demonstrated. The output light was improved 37% after 45min PEC oxidation. | en_US |
| dc.identifier.isbn | 0-7803-9242-6 | en_US |
| dc.identifier.journal | 2005 Pacific Rim Conference on Lasers and Electro-Optics | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18065 | |
| dc.identifier.wosnumber | WOS:000236757900098 | |
| dc.language.iso | en_US | en_US |
| dc.title | Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O | en_US |
| dc.type | Proceedings Paper | en_US |
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