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The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxy

dc.citation.epage469en_US
dc.citation.issueen_US
dc.citation.spage466en_US
dc.citation.volume378en_US
dc.contributor.authorTzou, A. J.en_US
dc.contributor.authorChien, K. F.en_US
dc.contributor.authorLai, H. Y.en_US
dc.contributor.authorKu, J. T.en_US
dc.contributor.authorLee, L.en_US
dc.contributor.authorFan, W. C.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:31:48Z
dc.date.available2014-12-08T15:31:48Z
dc.date.issued2013-09-01en_US
dc.description.abstractThe growth and optical properties of self-assembled ZnO nanorods grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PA-MBE) were studied. By controlling the Zn/O flux ratio, the growth of ZnO nanorods on Si(111) substrate without catalyst has been achieved. Scanning electron microscopy (SEM) shows the ZnO nanorods with various density and diameter could be controlled. Photoluminescence (PL) measurements exhibit nice optical properties. The sharp near band edge PL emission with full width at half maximum (FWHM) of about 17 meV indicates that the ZnO nanorods could be used as the high efficient photonic devices. Crown Copyright (c) 2013 Published by Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jcrysgro.2012.12.137en_US
dc.identifier.issn0022-0248en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2012.12.137en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/22479
dc.identifier.wosnumberWOS:000323355900116
dc.language.isoen_USen_US
dc.subjectNanostructuresen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectOxidesen_US
dc.subjectZinc compoundsen_US
dc.subjectSemiconducting II-VI materialsen_US
dc.titleThe study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxyen_US
dc.typeArticle; Proceedings Paperen_US

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