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Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

dc.citation.epage409en_US
dc.citation.spage407en_US
dc.citation.woscount0en_US
dc.contributor.authorLiu, Chienen_US
dc.contributor.authorFan, Chia-Chien_US
dc.contributor.authorTseng, Chih-Yangen_US
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChen, Yen-Liangen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorLin, Chien-Liangen_US
dc.contributor.authorFan, Yu-Chien_US
dc.contributor.authorLee, Tsung-Mingen_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2019-04-02T06:04:27Z
dc.date.available2019-04-02T06:04:27Z
dc.date.issued2018-01-01en_US
dc.description.abstractIn this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAIO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAIO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.en_US
dc.identifier.journal2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/151073
dc.identifier.wosnumberWOS:000458919700122en_US
dc.language.isoen_USen_US
dc.titleInvestigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxidesen_US
dc.typeProceedings Paperen_US

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