The Study of Reflex Klystron

Abstract

In the fabrication of the modern silicon semiconductor device, such as the passivated planar transistor or the monolithic intergrated circuit, the p-n junction is formed by impurity diffusion through a finite diffusion mask opening. The diffusion mask is a layer of silicon dioxide thermally grown by steam oxidation technique. The diffusion opening may be a rectangular stripe or circular dot precisely revealed by photolithographic technique. The impurity atom distribution can not be approximated by an elementary one-dimensional diffusion process. Instead, this distribution must be determined from a detailed solution of a boundary value problem for the structure under consideration. The purpose of this paper is to present a full three-dimensional soution of diffusion problem by integral transform method. The solution is based upon an instantaneous source diffusion process. Two different diffusion openings are considered in the analysis. The rectangular coordinates and the multiple Fourier transform are used for the rectangular geometry. The cylindrical coordinates and the multiple Fourier-Bessel transform are used for the circular geometry.