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極紫外光(EUV)微影技術從光源建造、光罩、材料、製程到奈米元件可靠度研究(II)

dc.contributor.author黃遠東en_US
dc.contributor.authorHUANG YANG-TUNGen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
dc.date.accessioned2014-12-13T10:49:21Z
dc.date.available2014-12-13T10:49:21Z
dc.date.issued2009en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC98-2120-M009-007zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1888371&docId=312332en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/101605
dc.language.isozh_TWen_US
dc.title極紫外光(EUV)微影技術從光源建造、光罩、材料、製程到奈米元件可靠度研究(II)zh_TW
dc.titleInvestigations on Extreme Ultraviolet Lithography (Euvl) from Beamline Construction, Masks, Materials, Processes, to Reliability of Nano Devices (II)en_US
dc.typePlanen_US

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