Effect of oxygen absorption on contact resistance between metal and carbon nano tubes (CNTs)
| dc.citation.epage | 87 | en_US |
| dc.citation.spage | 86 | en_US |
| dc.contributor.author | Tsui, Bing-Yue | en_US |
| dc.contributor.author | Weng, Chien-Li | en_US |
| dc.contributor.author | Chang, Chih-Lien | en_US |
| dc.contributor.author | Wei, Jeng-Hua | en_US |
| dc.contributor.author | Tsai, Ming-Jinn | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:08Z | |
| dc.date.available | 2014-12-08T15:25:08Z | |
| dc.date.issued | 2006 | en_US |
| dc.description.abstract | Contact resistance (R-c) between metal and carbon nanotubes (CNTs) is studied extensively. Metal oxide formation at interface due to oxygen absorption plays very important role. Chemically inert metals such as Pt and Au results in the lowest R-c. Adding Ta into Pt can solve the adhesion issue while keeps low R-c. Those metals can break metal oxide and form metal carbide are also preferred. | en_US |
| dc.identifier.isbn | 1-4244-0181-X | en_US |
| dc.identifier.journal | 2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papers | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17509 | |
| dc.identifier.wosnumber | WOS:000239791300031 | |
| dc.language.iso | en_US | en_US |
| dc.title | Effect of oxygen absorption on contact resistance between metal and carbon nano tubes (CNTs) | en_US |
| dc.type | Proceedings Paper | en_US |
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