Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology
| dc.citation.epage | 1277 | en_US |
| dc.citation.spage | 1276 | en_US |
| dc.contributor.author | Ling, Shih-Chun | en_US |
| dc.contributor.author | Wang, Te-Chung | en_US |
| dc.contributor.author | Ko, Tsung-Shine | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:16:52Z | |
| dc.date.available | 2014-12-08T15:16:52Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 run peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium, Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%. | en_US |
| dc.identifier.isbn | 978-1-4244-1173-3 | en_US |
| dc.identifier.journal | 2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12401 | |
| dc.identifier.wosnumber | WOS:000256956600643 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology | en_US |
| dc.type | Proceedings Paper | en_US |
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