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Al2O3 films formed by anodic oxidation of Al-1wt.%Si-0.5wt%Cu films

dc.citation.epage665en_US
dc.citation.spage662en_US
dc.contributor.authorCHIU, Sen_US
dc.contributor.authorCHANG, PHen_US
dc.contributor.authorTUNG, CHen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:27:53Z
dc.date.available2014-12-08T15:27:53Z
dc.date.issued1994en_US
dc.identifier.isbn3-88355-199-6en_US
dc.identifier.journalTHIN FILMS: PROCEEDINGS OF THE JOINT 4TH INTERNATIONAL SYMPOSIUM ON TRENDS AND NEW APPLICATIONS IN THIN FILMS - TATF '94 AND THE 11TH CONFERENCE ON HIGH VACUUM, INTERFACES AND THIN FILMS - HVITF '94en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20150
dc.identifier.wosnumberWOS:A1994BD74L00146
dc.language.isoen_USen_US
dc.titleAl2O3 films formed by anodic oxidation of Al-1wt.%Si-0.5wt%Cu filmsen_US
dc.typeProceedings Paperen_US

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