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Anisotropy light extraction with high polarization ratio from photonic crystal fight-emitting diodes

dc.citation.epage1020en_US
dc.citation.spage1019en_US
dc.contributor.authorLai, Chun-Fengen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Changen_US
dc.contributor.authorChao, C. H.en_US
dc.contributor.authorHsueh, H. T.en_US
dc.contributor.authorWang, J-F. T.en_US
dc.contributor.authorYeh, W. Y.en_US
dc.contributor.authorChi, J. Y.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:03:25Z
dc.date.available2014-12-08T15:03:25Z
dc.date.issued2008en_US
dc.description.abstractThe azimuthal anisotropy of GaN photonic crystal light-emitting diode is investigated using an annular structure. The extracted light distribution has P/S ratio of 5.5 for fight propagating in Gamma X direction and 2.1 for Gamma M direction. @2007 Optical Society of Americaen_US
dc.identifier.isbn978-1-55752-859-9en_US
dc.identifier.journal2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/1963
dc.identifier.wosnumberWOS:000260498400511
dc.language.isoen_USen_US
dc.titleAnisotropy light extraction with high polarization ratio from photonic crystal fight-emitting diodesen_US
dc.typeProceedings Paperen_US

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