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Transparent resistive random access memory (T-RRAM) based on Gd2O3 film and its resistive switching characteristics

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dc.citation.epage+en_US
dc.citation.spage898en_US
dc.citation.woscount3en_US
dc.contributor.authorLiu, Kou-Chenen_US
dc.contributor.authorTzeng, Wen-Hsienen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChan, Yi-Chunen_US
dc.contributor.authorKuo, Chun-Chihen_US
dc.contributor.authorCheng, Chun-Wenen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2017-04-21T06:49:52Z
dc.date.available2017-04-21T06:49:52Z
dc.date.issued2010en_US
dc.description.abstractA transparent resistive random access memory (T-RRAM) based on ITO/Gd2O3/ITO capacitor structure is successfully fabricated on Glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd2O3/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.en_US
dc.identifier.isbn978-1-4244-3543-2en_US
dc.identifier.journalINEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134876
dc.identifier.wosnumberWOS:000282026500455en_US
dc.language.isoen_USen_US
dc.titleTransparent resistive random access memory (T-RRAM) based on Gd2O3 film and its resistive switching characteristicsen_US
dc.typeProceedings Paperen_US

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