Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs
| dc.citation.epage | 283 | en_US |
| dc.citation.spage | 281 | en_US |
| dc.contributor.author | Tang, CS | en_US |
| dc.contributor.author | Yu, SM | en_US |
| dc.contributor.author | Chou, HM | en_US |
| dc.contributor.author | Lee, JW | en_US |
| dc.contributor.author | Li, YM | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2014-12-08T15:25:55Z | |
| dc.date.available | 2014-12-08T15:25:55Z | |
| dc.date.issued | 2004 | en_US |
| dc.description.abstract | In this paper, electrical characteristics of sub-10 not nanowire FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than that latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs. | en_US |
| dc.identifier.isbn | 0-7803-8536-5 | en_US |
| dc.identifier.journal | 2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18359 | |
| dc.identifier.wosnumber | WOS:000226085100094 | |
| dc.language.iso | en_US | en_US |
| dc.subject | nanodevice | en_US |
| dc.subject | semiconductor devices | en_US |
| dc.subject | nanowire | en_US |
| dc.subject | FinFET | en_US |
| dc.subject | omega-shaped-gate | en_US |
| dc.subject | surrounding-gate quantum correction model | en_US |
| dc.subject | density-gradient | en_US |
| dc.subject | coverage ration | en_US |
| dc.subject | 3D simulation | en_US |
| dc.subject | turn-on and turn-off characteristics | en_US |
| dc.subject | gate capacitance | en_US |
| dc.subject | turn-on resistance | en_US |
| dc.subject | modeling and simulation | en_US |
| dc.title | Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs | en_US |
| dc.type | Proceedings Paper | en_US |
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