THz emission characteristics of dipole antennas fabricated on multi-energy arsenic-ionimplanted GaAs and semi-insulating GaAs
| dc.citation.epage | 279 | en_US |
| dc.citation.spage | 277 | en_US |
| dc.citation.volume | 71 | en_US |
| dc.contributor.author | Liu, TA | en_US |
| dc.contributor.author | Tani, M | en_US |
| dc.contributor.author | Lin, GR | en_US |
| dc.contributor.author | Pan, CL | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:26:06Z | |
| dc.date.available | 2014-12-08T15:26:06Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.abstract | We compare the performance of THz dipole antennas fabricated on Multi-energy arsenic-ion-implanted GaAs (multi-GaAs:As+) and Semi-insulating (S. I.) GaAs. High damage threshold biasing (> 60 kV/cm) and large saturating optical pumping power (> 30 mW) for multi-GaAs:As+ based devices are reported. | en_US |
| dc.identifier.isbn | 3-540-00089-5 | en_US |
| dc.identifier.issn | 0172-6218 | en_US |
| dc.identifier.journal | ULTRAFAST PHENOMENA XIII | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18503 | |
| dc.identifier.wosnumber | WOS:000182432900086 | |
| dc.language.iso | en_US | en_US |
| dc.title | THz emission characteristics of dipole antennas fabricated on multi-energy arsenic-ionimplanted GaAs and semi-insulating GaAs | en_US |
| dc.type | Proceedings Paper | en_US |
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