Mode Localization in Defect-free GaN-based Bottom-up Photonic Quasicrystal Lasers

dc.citation.epage	172	en_US
dc.citation.spage	171	en_US
dc.contributor.author	Wu, Tzeng-Tsong	en_US
dc.contributor.author	Chen, Chih-Cheng	en_US
dc.contributor.author	Chen, Hao-Wen	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.contributor.author	Kuo, Cheng-Huang	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2014-12-08T15:30:07Z
dc.date.available	2014-12-08T15:30:07Z
dc.date.issued	2012	en_US
dc.description.abstract	GaN-based bottom-up photonic quasicrystal (PQC) lasers were realized and characterized. Photonic quasicrystal nanopillars were realized by nanoimprint technique and selective area growth. Highly localized mode was identified for the first time in GaN-based PQC lasers. (C) 2012 Optical Society of America	en_US
dc.identifier.isbn	978-1-4577-0828-2	en_US
dc.identifier.issn	2326-5442	en_US
dc.identifier.journal	2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/21591
dc.identifier.wosnumber	WOS:000316820100086
dc.language.iso	en_US	en_US
dc.title	Mode Localization in Defect-free GaN-based Bottom-up Photonic Quasicrystal Lasers	en_US
dc.type	Proceedings Paper	en_US

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