Method for fabricating a resistor for a resistance random access memory
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 08470637 | zh_TW |
| dc.contributor.author | Tseng Tseung-Yuen | en_US |
| dc.contributor.author | Wang Sheng-Yu | en_US |
| dc.contributor.author | Tsai Chen-Han | en_US |
| dc.date.accessioned | 2014-12-16T06:14:01Z | |
| dc.date.available | 2014-12-16T06:14:01Z | |
| dc.date.issued | 2013-06-25 | en_US |
| dc.description.abstract | A method for fabricating a resistor for a resistance random access memory (RRAM) includes: (a) forming a first electrode over a substrate; (b) forming a variable resistance layer of zirconium oxide on the first electrode under a working temperature, which ranges from 175° C. to 225° C.; and (c) forming a second electrode of Ti on the variable resistance layer. | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.govdoc | H01L021/00 | zh_TW |
| dc.identifier.govdoc | H01L021/16 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104470 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Method for fabricating a resistor for a resistance random access memory | zh_TW |
| dc.type | Patents | en_US |